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| Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 15.00.3 3.00.2 4.60.2 3.20.1 9.90.3 2.90.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25C) Ratings -40 -50 -20 -40 -5 -8 -4 25 2 150 -55 to +150 Unit V 13.7-0.2 +0.5 4.10.2 8.00.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 2.60.1 0.70.1 emitter voltage 2SB1603A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V 7 123 V A A W C C 1:Base 2:Collector 3:Emitter TO-220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1603 2SB1603A (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = -40V, IE = 0 VEB = -5V, IC = 0 IC = -10mA, IB = 0 VCE = -2V, IC = - 0.1A VCE = -2V, IC = -1A IC = -2A, IB = - 0.1A IC = -2A, IB = - 0.1A VCE = -5V, IC = - 0.5A, f = 10MHz IC = -2A, IB1 = - 0.2A, IB2 = 0.2A min typ max -50 -50 Unit A A V -20 -40 45 90 260 - 0.5 -1.5 150 0.3 0.4 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h FE2 VCE(sat) VBE(sat) fT ton tstg tf V V MHz s s s Rank classification Q 90 to 180 P 130 to 260 Rank hFE2 1 Power Transistors PC -- Ta 40 -6 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SB1603, 2SB1603A IC -- VCE IB=-80mA VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=20 -30 -10 -3 -1 TC=25C Collector power dissipation PC (W) 35 30 25 20 15 10 5 0 0 25 -5 Collector current IC (A) -4 -50mA -45mA -40mA -35mA -30mA (1) -3 -25mA -20mA TC=100C 25C -25C -2 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -15mA -10mA (2) (3) -1 -5mA 0 50 75 100 125 150 0 -2 -4 -6 -8 -10 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC -100 -1000 IC/IB=20 hFE -- IC 1000 VCE=-2V TC=100C 25C -25C -30 -10 -3 -1 300 100 30 10 3 1 0.3 fT -- IC VCE=-2V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE -10 -3 -1 TC=-25C 25C 100C -100 - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 - 0.3 - 0.1 - 0.01 - 0.03 - 0.1 - 0.3 Transition frequency fT (MHz) -1 -3 -10 -30 -300 -1 -3 -10 0.1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 10 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (-IB1=IB2) VCC=-20V TC=25C ton 0.3 tstg tf Area of safe operation (ASO) -100 -30 Non repetitive pulse TC=25C Switching time ton,tstg,tf (s) 3 Collector current IC (A) -10 -3 -1 ICP 10ms IC 1s t=1ms 1 0.1 - 0.3 - 0.1 - 0.03 0.03 0.01 0 -1 -2 -3 -4 -5 -6 -7 -8 - 0.01 -1 -3 -10 -30 2SB1603A -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 2SB1603 Power Transistors Rth(t) -- t 102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SB1603, 2SB1603A Thermal resistance Rth(t) (C/W) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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